Micron Technology DRAM SDRAMMobile-, Part #: MT40A4G4JC-062E:E | Dynamic random access memory | DEX Level 2 TEX:NVP0090-007000

TEX:NVP0090-007000

Onsemi Part #NLAS3158MNR2G

UQFN-8 • Low Supply Current: 3

High-intensity discharge (HID)

while pulse-skipping mode provides the lowest voltage ripple

Micron Technology DRAM SDRAMMobile-, Part #: MT40A4G4JC-062E:E | Dynamic random access memory | DEX Level 2 TEX:NVP0090-007000Micron Technology DRAM SDRAM DDR4, Part #: MT40A4G4JC 062E: E features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV, +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O TC maximum up to 95C 64ms, 8192 cycle refresh up to 85C 32ms, 8192 cycle refresh at >85C to 95C 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe