Micron Technology DRAM SDRAM-DDR2, Part #: MT47H256M8EB-25E:C TR | Dynamic random access memory | DEX GE IGBT Line Side 1.5 GEC:151X122BRO1PK01

GEC:151X122BRO1PK01

Wireless base station control circuits

0" FHD BENT AG 300 SLP LGD

• Available in Small-Footprint VOG48

5 V • Power Down High−Impedance Inputs/Outputs • Over−Voltage Tolerance Inputs Facilitate 5 V to 3 V Translation • Proprietary Noise/EMI Reduction Circuitry

Micron Technology DRAM SDRAM-DDR2, Part #: MT47H256M8EB-25E:C TR | Dynamic random access memory | DEX GE IGBT Line Side 1.5 GEC:151X122BRO1PK01Micron Technology DRAM SDRAM DDR2, Part #: MT47H256M8EB 25E: C TR features: VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency