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Model PIR HC-SR501 Working Voltage DC 4
LED indicator
6W Capacitance 450pF AC Vrms 320V DC Voltage 410V Mounting Type Through Hole
High-Efficiency
maximum peak reverse voltage 400v
5N120BND Power MOSFET Cell holder Model PIR HC-SR501 Working VoltageIGBT designs that do not require a punch through are the HGTG5N120BND and HGTP5N120BND. They are brand new IGBTs that are MOS gated for high voltage switching. IGBTs combine the greatest elements of bipolar transistors and MOSFETs. This device combines the low on state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. The IGBT in use is a TA49308 development type. The TA49058 development type diode is utilized (Part
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