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Ships within 48 hours · Estimated delivery Jul 31 - Aug 5
Advantages:
surface mount SOIC8 package
024 Data EEPROM/HEF (bytes) 512 Digital Communication Peripherals 1-UART
Including Ground (VEE)
1V and a reverse breakdown value of 1000V
Infineon 17N80C3 800V 17A N Channel MOSFET TO-247 Package GaAs Ired & Photo-Thyristor Advantages:These Power MOSFETs are designed using the company's consolidated strip layout based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the companys proprietary edge termination structure, gives the lowest Rds(on) per area, unrivalled gate charge, and switching characteristics. Features New revolutionary high voltage technology Ultra low gate charge Periodic
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