Micron Technology DRAM RLDRAM3, Part #MT41K128M16JT-107 IT:K TR | Dynamic random access memory | DEX FT702LT In-System Programmable PROMs for Configuration

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Micron Technology DRAM RLDRAM3, Part #MT41K128M16JT-107 IT:K TR | Dynamic random access memory | DEX FT702LT In-System Programmable PROMs for ConfigurationMicron Technology DRAM SDRAM DDR3L, Part #MT41K128M16JT 107 IT: K TR Features VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based