Micron Technology DRAM SDRAM-DDR3L, Part #: MT53E256M32D2DS-053 AIT:B | Dynamic random access memory | DEX processor Part #LT1460JCS3-3#PBF | Voltage Reference

Part #LT1460JCS3-3#PBF | Voltage Reference | DEX uses curvature compensation to obtain low temperature coefficient and trimmed precision thin-film resistors to achieve high output accuracy

and high impedance sensors all benefit from the combination of performance features

Cache Memory: 64 MByte (onboard)

SEA:STDR2000100

452215031562

Micron Technology DRAM SDRAM-DDR3L, Part #: MT53E256M32D2DS-053 AIT:B | Dynamic random access memory | DEX processor Part #LT1460JCS3-3#PBF | Voltage ReferenceMicron Technology DRAM SDRAMMobile , Part #: MT53E256M32D2DS 053 AIT: B features: Ultra low voltage core and I O power supplies VDD1 = 1. 701. 95V; 1. 80V nominal VDD2 = 1. 061. 17V; 1. 10V nominal VDDQ = 1. 061. 17V; 1. 10V nominal or Low VDDQ = 0. 570. 65V; 0. 60V nominal Frequency range 213310 MHz (data rate range: 426620 Mb s pin) 16n prefetch DDR architecture 8 internal banks per channel for concurrent operation Single data rate CMD ADR entry