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It also offers unique features such as separate pull-up/down outputs
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The ESD tolerance of the SP3222EB / SP3232E devices is over ±15kV for both Human Body Model and IEC61000-4-2 Air discharge test methods
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IXYS High Voltage Power MOSFET
Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L768M32D3PU-107 WT:B TR | Dynamic random access memory | DEX MRC2 It also offers unique featuresMicron Technology DRAM SDRAMMobile , Part #: MT52L768M32D3PU 107 WT: B TR features: VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL)
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