Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A1G16KD-062E:E TR | Dynamic random access memory | DEX Polycarbonate Cap Bank Cover Part #: MT53E256M32D2DS-053 AAT:B TR

Part #: MT53E256M32D2DS-053 AAT:B TR features: • Ultra-low-voltage core and I/O power supplies – VDD1 = 1

ACS800 Converter

The AP22811 is available in standard Green SOT25 and MSOP-8 packages with RoHS compliance

Xilinx FPGA Part #XAZU2EG-1SFVC784I

50mm Width)

Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A1G16KD-062E:E TR | Dynamic random access memory | DEX Polycarbonate Cap Bank Cover Part #: MT53E256M32D2DS-053 AAT:B TRMicron Technology DRAM SDRAM DDR4, Part #: MT40A1G16KD 062E: E TR features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose register